通过浸涂法原位生长和图案化排列的有机纳米线阵列

In situ growing and patterning of aligned organic nanowire arrays via dip coating.

作者信息

Liu Nanliu, Zhou Yan, Wang Lei, Peng Junbiao, Wang Jian, Pei Jian, Cao Yong

机构信息

Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.

出版信息

Langmuir. 2009 Jan 20;25(2):665-71. doi: 10.1021/la8036633.

DOI:10.1021/la8036633

PMID:19090657

Abstract

Aligned organic nanowire arrays are grown in situ and patterned via dip coating. By optimizing the stick-slip motion, the solvent evaporation conditions, and the solution concentration, parallel organic nanowire arrays with tunable length and desirable density and periodicity are directly grown and aligned on the substrate. Organic FETs based on the organic nanowire array have been successfully fabricated with a mobility of 1 x 10(-4) cm(2) .V(-1).s(-1).

摘要

通过浸涂原位生长并图案化排列的有机纳米线阵列。通过优化粘滑运动、溶剂蒸发条件和溶液浓度，可在基板上直接生长并排列出长度可调、密度和周期性理想的平行有机纳米线阵列。基于该有机纳米线阵列的有机场效应晶体管已成功制备，迁移率为1×10⁻⁴ cm²·V⁻¹·s⁻¹。