Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Hamburg, Germany.
J Phys Condens Matter. 2012 Jan 18;24(2):024208. doi: 10.1088/0953-8984/24/2/024208. Epub 2011 Dec 15.
We investigate switching and field-driven domain wall motion in nanowires with perpendicular magnetic anisotropy comprising local modifications of the material parameters. Intentional nucleation and pinning sites with various geometries inside the nanowires are realized via a local reduction of the anisotropy constant. Micromagnetic simulations and analytical calculations are employed to determine the switching fields and to characterize the pinning potentials and the depinning fields. Nucleation sites in the simulations cause a significant reduction of the switching field and are in excellent agreement with analytical calculations. Pinning potentials and depinning fields caused by the pinning sites strongly depend on their shapes and are well explained by analytical calculations.
我们研究了具有垂直磁各向异性的纳米线中，通过局部改变材料参数来实现的畴壁的切换和磁场驱动运动。通过局部降低各向异性常数，在纳米线内部实现了具有各种几何形状的有意成核和钉扎位。采用微磁模拟和解析计算来确定切换场，并对钉扎势和去钉扎场进行了表征。模拟中的成核位导致切换场显著降低，与解析计算结果非常吻合。由钉扎位引起的钉扎势和去钉扎场强烈依赖于它们的形状，可以很好地用解析计算来解释。
