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在基底上生长取向一致的硅 MFI 和 BEA 沸石膜。

Growth of uniformly oriented silica MFI and BEA zeolite films on substrates.

机构信息

Korea Center for Artificial Photosynthesis and Department of Chemistry, Sogang University, Seoul 121-742, Korea.

出版信息

Science. 2011 Dec 16;334(6062):1533-8. doi: 10.1126/science.1212472.

DOI:10.1126/science.1212472
PMID:22174247
Abstract

Applications of zeolite films benefit from alignment of the integrated channels, but methods for film growth have nearly always introduced orientational randomization in the direction normal to the substrate. We now report facile methods to grow silicalite-1 films and pure silica beta zeolite films on substrates with straight or sinusoidal channels positioned uniformly upright at a thickness of up to 8 micrometers. Precise gel compositions and processing temperatures are critical to promote secondary growth on pre-formed oriented crystal monolayers while suppressing self-crystallization in the bulk medium. Preliminary results highlight the potential of these uniformly oriented films in the nonlinear optical response and separation of xylene isomers.

摘要

沸石膜的应用受益于整合通道的排列,但膜生长的方法几乎总是在垂直于基底的方向上引入取向随机化。我们现在报告了在具有直通道或正弦通道的基底上生长 silicalite-1 膜和纯硅β沸石膜的简便方法,这些通道均匀地垂直排列,厚度可达 8 微米。精确的凝胶组成和处理温度对于在预先形成的取向单晶层上促进二次生长,同时抑制体相中的自结晶至关重要。初步结果突出了这些均匀取向膜在非线性光学响应和二甲苯异构体分离方面的潜力。

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