Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany.
Phys Rev Lett. 2011 Nov 18;107(21):216805. doi: 10.1103/PhysRevLett.107.216805.
In resonant inelastic light scattering experiments on two-dimensional hole systems in GaAs-Al(x)Ga(1-x)As single quantum wells we find evidence for the strongly anisotropic spin-split hole dispersion at finite in-plane momenta. In all our samples we detect a low-energy spin-density excitation of a few meV, stemming from excitation of holes of the spin-split ground state. The detailed spectral shape of the excitation depends sensitively on the orientations of the linear light polarizations with respect to the in-plane crystal axes. In particular, we observe a doublet structure, which is most pronounced if the polarization of the incident light is parallel to the [110] in-plane direction. Theoretical calculations of the Raman spectra based on a multiband k · p approach confirm that the observed doublet structure is due to the anisotropic spin-split hole dispersion.
在 GaAs-Al(x)Ga(1-x)As 单量子阱二维空穴系统的共振非弹性光散射实验中,我们发现了在有限面内动量下强各向异性自旋分裂空穴色散的证据。在我们所有的样品中,我们探测到了一个几毫电子伏特的低能自旋密度激发,源于自旋分裂基态空穴的激发。激发的详细光谱形状对线性光偏振相对于面内晶体轴的取向非常敏感。特别是,我们观察到一个双线结构,如果入射光的偏振平行于[110]面内方向,则该结构最为明显。基于多带 k·p 方法的拉曼光谱理论计算证实,观察到的双线结构是由于各向异性的自旋分裂空穴色散引起的。