Instituto de Química, Universidade Federal de Alfenas, Alfenas, MG, Brazil.
J Colloid Interface Sci. 2012 Mar 1;369(1):302-8. doi: 10.1016/j.jcis.2011.11.060. Epub 2011 Dec 6.
A silica-cerium mixed oxide (SiCe) was prepared by the sol-gel process, using tetraethylorthosilicate and cerium nitrate as precursors and obtained as an amorphous solid possessing a specific surface area of 459 m(2) g(-1). Infrared spectroscopy of the SiCe material showed the formation of the Si-O-Ce linkage in the mixed oxide. Scanning electron microscopy/energy dispersive spectroscopy indicated that the cerium oxide particles were homogenously dispersed on the matrix surface. X-ray diffraction and (29)Si solid-state nuclear magnetic resonance implied non-crystalline silica matrices with chemical environments that are typical for silica-based mixed oxides. X-ray photoelectron spectroscopy showed that Ce was present in approximately equal amounts of both the 3+ and 4+ oxidation states. Cyclic voltammetry data of electrode prepared from the silica-cerium mixed oxide showed a peak for oxidation of Ce(3+)/Ce(4+) at 0.76 V and electrochemical impedance spectroscopy equivalent circuit indicated a porous structure with low charge transfer resistance. In the presence of nitrite, the SiCe electrode shows an anodic oxidation peak at 0.76 V with a linear response as the concentration of the analyte increases from 3×10(-5) at 3.9×10(-3) mol L(-1).
一种硅铈混合氧化物(SiCe)通过溶胶-凝胶法制备,使用正硅酸乙酯和硝酸铈作为前体,并获得具有 459 m(2) g(-1)比表面积的无定形固体。SiCe 材料的红外光谱显示了混合氧化物中 Si-O-Ce 键的形成。扫描电子显微镜/能谱分析表明,氧化铈颗粒均匀分散在基体表面。X 射线衍射和(29)Si 固态核磁共振表明具有典型的硅基混合氧化物化学环境的非晶态二氧化硅基体。X 射线光电子能谱表明,Ce 以约相等的 3+和 4+氧化态存在。由硅铈混合氧化物制备的电极的循环伏安数据显示 Ce(3+)/Ce(4+)氧化的峰在 0.76 V 处,电化学阻抗谱等效电路表明具有低电荷转移电阻的多孔结构。在亚硝酸盐存在下,SiCe 电极在 0.76 V 处显示出一个阳极氧化峰,随着分析物浓度从 3×10(-5)增加到 3.9×10(-3)mol L(-1),线性响应。