具有可调电子-空穴重叠的高发光（Zn，Cd）Te/CdSe 胶体杂化纳米线。
Highly luminescent (Zn,Cd)Te/CdSe colloidal heteronanowires with tunable electron-hole overlap.
机构信息
Condensed Matter and Interfaces, Debye Institute, Utrecht University, 3508 TA Utrecht, The Netherlands.
出版信息
Nano Lett. 2012 Feb 8;12(2):749-57. doi: 10.1021/nl203695m. Epub 2012 Jan 5.
We report the synthesis of ultranarrow (Zn,Cd)Te/CdSe colloidal heteronanowires, using ZnTe magic size clusters as seeds. The wire formation starts with a partial Zn for Cd cation exchange, followed by self-organization into segmented heteronanowires. Further growth occurs by inclusion of CdSe. The heteronanowires emit in the 530 to 760 nm range with high quantum yields. The electron-hole overlap decreases with increasing CdSe volume fraction, allowing the optical properties to be controlled by adjusting the heteronanowire composition.
我们报告了使用 ZnTe 超小量子点作为晶种合成超窄（Zn,Cd）Te/CdSe 核壳胶体异质纳米线的方法。纳米线的形成始于部分 Zn 对 Cd 阳离子的交换，然后通过自组装形成分段核壳异质纳米线。进一步的生长是通过 CdSe 的加入来实现的。异质纳米线在 530 到 760nm 范围内具有高光致发光量子产率。电子-空穴重叠随着 CdSe 体积分数的增加而减小，这使得通过调整异质纳米线的组成来控制光学性质成为可能。
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