School of Materials Science and Engineering, BeiHang University, Beijing 100191, PR China.
ACS Appl Mater Interfaces. 2012 Jan;4(1):65-8. doi: 10.1021/am2016156. Epub 2012 Jan 9.
The effect of metal-semiconductor Zn-ZnO core-shell structure on dielectric properties of polyvinylidene fluoride (PVDF) composites was investigated. Zn-ZnO fillers were obtained by the heat-treatment of raw Zn particles under air. The enhanced dielectric constant of Zn-ZnO/PVDF composites results from the duplex interfacial polarizations induced by metal-semiconductor interface and semiconductor-insulator interface. The dielectric loss is still low because of the presence of ZnO semiconductor shell between Zn metal core and insulator PVDF matrix. Furthermore, the dielectric performance of as-prepared composites could be further optimized through adjusting the thickness of semiconductor shell.
研究了金属-半导体 Zn-ZnO 核壳结构对聚偏二氟乙烯(PVDF)复合材料介电性能的影响。通过在空气中对原始 Zn 颗粒进行热处理获得了 Zn-ZnO 填充剂。Zn-ZnO/PVDF 复合材料介电常数的增强源于金属-半导体界面和半导体-绝缘体界面引起的双界面极化。由于 ZnO 半导体壳层的存在,Zn 金属核和绝缘体 PVDF 基质之间的介电损耗仍然很低。此外,通过调整半导体壳层的厚度,可以进一步优化所制备复合材料的介电性能。