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多氧化还原四硫富瓦烯修饰的无氧化物终止的硅(100)表面。

Multiredox tetrathiafulvalene-modified oxide-free hydrogen-terminated Si(100) surfaces.

机构信息

Sciences Chimiques de Rennes, UMR 6226 CNRS/Université de Rennes 1, MaCSE, Campus de Beaulieu, 35042 Rennes Cedex, France.

出版信息

Langmuir. 2012 Feb 21;28(7):3453-9. doi: 10.1021/la204375a. Epub 2012 Feb 7.

Abstract

Tetrathiafulvalene (TTF) monolayers covalently bound to oxide-free hydrogen-terminated Si(100) surfaces have been prepared from the hydrosilylation reaction involving a TTF-terminated ethyne derivative. FTIR spectroscopy characterization using similarly modified porous Si(100) substrates revealed the presence of vibration bands assigned to the immobilized TTF rings and the Si-C═C- interfacial bonds. Cyclic voltammetry measurements showed the presence of two reversible one-electron systems ascribed to TTF/TTF(.+) and TTF(.+)/TTF(2+) redox couples at ca. 0.40 and 0.75 V vs SCE, respectively, which compare well with the values determined for the electroactive molecule in solution. The amount of immobilized TTF units could be varied in the range from 1.7 × 10(-10) to 5.2 × 10(-10) mol cm(-2) by diluting the TTF-terminated chains with inert n-decenyl chains. The highest coverage obtained for the single-component monolayer is consistent with a densely packed TTF monolayer.

摘要

四硫富瓦烯(TTF)单层共价键合到无氧化物的氢化终止硅(100)表面,是通过涉及 TTF 末端乙炔衍生物的硅氢加成反应制备的。使用类似修饰的多孔硅(100)基底的傅里叶变换红外光谱(FTIR)光谱表征显示存在振动带,其分配给固定化的 TTF 环和 Si-C═C-界面键。循环伏安测量显示存在两个可逆的单电子系统,分别归因于 TTF/TTF(+)和 TTF(.+)/TTF(2+)氧化还原偶对,约为 0.40 和 0.75 V 相对于 SCE,这与溶液中电活性分子确定的值很好地吻合。通过用惰性 n-癸基链稀释 TTF 末端链,可以将固定化的 TTF 单元的量在 1.7×10(-10)至 5.2×10(-10) mol cm(-2)的范围内变化。单一组分单层获得的最高覆盖率与密集堆积的 TTF 单层一致。

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