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在拓扑绝缘体的同系物中进行原子特异性自旋映射和埋藏拓扑态。

Atom-specific spin mapping and buried topological states in a homologous series of topological insulators.

机构信息

Institute of Strength Physics and Materials Science, pr. Academicheskiy 2/4, 634021, Tomsk, Russia.

出版信息

Nat Commun. 2012 Jan 24;3:635. doi: 10.1038/ncomms1638.

Abstract

A topological insulator is a state of quantum matter that, while being an insulator in the bulk, hosts topologically protected electronic states at the surface. These states open the opportunity to realize a number of new applications in spintronics and quantum computing. To take advantage of their peculiar properties, topological insulators should be tuned in such a way that ideal and isolated Dirac cones are located within the topological transport regime without any scattering channels. Here we report ab-initio calculations, spin-resolved photoemission and scanning tunnelling microscopy experiments that demonstrate that the conducting states can effectively tuned within the concept of a homologous series that is formed by the binary chalcogenides (Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3)), with the addition of a third element of the group IV.

摘要

拓扑绝缘体是一种量子物质态,在体内表现为绝缘体,但在表面存在拓扑保护的电子态。这些态为在自旋电子学和量子计算中实现许多新应用开辟了机会。为了利用它们的特殊性质,拓扑绝缘体应该进行调谐,使得理想且孤立的狄拉克锥位于拓扑输运区中,而没有任何散射通道。在这里,我们报告了从头算计算、自旋分辨光发射和扫描隧道显微镜实验的结果,这些结果表明,通过在由二元碲化物(Bi(2)Te(3)、Bi(2)Se(3)和 Sb(2)Te(3))组成的同系物中添加第四族的第三种元素,导电态可以在概念上进行有效调谐。

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