Rhee Hyug-Gyo, Lee Yun-Woo
Centerfor Space Optics, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea.
Opt Express. 2012 Jan 2;20(1):291-8. doi: 10.1364/OE.20.000291.
To address the requirements of multi-level semiconductors, we propose a new technique for overcoming the height limitation of direct laser lithography. In the proposed system, an original source beam is fed into an interference generator that divides the input beam by 50: 50 into two output beams. After going through an imaging lens, these two beams make two focusing spots, which are slightly separated in the axial direction. In the overlapped region, these two spots generate a small interferogram that shortens the depth of focus. By using this phenomenon, we are able to overcome the height limitation of direct laser lithography. The governing equations are also derived in this manuscript by using the Gaussian beam model.
为了满足多层半导体的要求，我们提出了一种克服直接激光光刻高度限制的新技术。在所提出的系统中，原始源光束被馈入干涉发生器，该发生器将输入光束以50:50的比例分成两束输出光束。经过成像透镜后，这两束光束形成两个聚焦点，它们在轴向方向上略有分离。在重叠区域，这两个点产生一个缩短焦深的小干涉图。利用这一现象，我们能够克服直接激光光刻的高度限制。本文还使用高斯光束模型推导了控制方程。
