National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.
J Phys Condens Matter. 2012 Mar 7;24(9):095005. doi: 10.1088/0953-8984/24/9/095005. Epub 2012 Jan 25.
Higher manganese silicide nanowires have been grown on the Si(001)-2 × 1 surface by the pre-growth of Bi nanolines. Scanning tunnelling microscope (STM) observations show that the nanowire has a linear surface reconstruction with a periodicity of 0.56 nm, and we propose a reconstruction on their surface to reduce the density of dangling bonds, which forms linear structures matching the dimensions from STM. Scanning tunnelling spectroscopy (STS) data agree with previous calculation results and reveal that the nanowires are degenerate semiconductors, with potential application for spintronics.
通过在 Si(001)-2×1 表面预生长 Bi 纳米线,成功生长出了更高锰硅化物纳米线。扫描隧道显微镜 (STM) 观察表明,纳米线具有 0.56nm 的线性表面重构,我们提出了一种表面重构来减少悬挂键的密度,这种重构形成了与 STM 尺寸匹配的线性结构。扫描隧道谱 (STS) 数据与之前的计算结果一致,表明纳米线是简并半导体,有望应用于自旋电子学。