在近邻Si(100)上生长的单向铂硅化物纳米线。
Unidirectional Pt silicide nanowires grown on vicinal Si(100).
作者信息
Lim Do Kyung, Bae Sung-Soo, Choi Junghun, Lee Dohyun, Sung Da Eun, Kim Sehun, Kim J K, Yeom H W, Lee Hangil
机构信息
Department of Chemistry and School of Molecular Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea.
出版信息
J Chem Phys. 2008 Mar 7;128(9):094701. doi: 10.1063/1.2835543.
We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.
我们研究了在偏离2°的Si(100)表面上生长的单向Pt₂Si纳米线（NWs）的结构和电子特性。我们发现，Pt₂Si纳米线沿着偏离2°的Si(100)表面的台阶边缘形成，在Si(100)台面发生c(4x6)重构，通过扫描隧道显微镜观察到这一现象，并且利用芯能级光发射光谱法发现所形成纳米线的结构为Pt₂Si。此外，我们证实了纳米线沿纳米线方向的电子能带结构与垂直于纳米线方向的不同，并且利用角分辨光发射光谱法观察到由Pt₂Si纳米线诱导的表面态，其态密度较小。
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