INSA/University of Toulouse, Toulouse, France.
Nanotechnology. 2012 Mar 2;23(8):085206. doi: 10.1088/0957-4484/23/8/085206. Epub 2012 Feb 1.
In this paper, the characteristics of silicon nanocrystals used as charge trapping centers in memory devices are examined using the two-level charge pumping (CP) technique performed as a function of frequency and energy filtered transmission electron microscopy (EFTEM). The parameters extracted from the two methods such as the depth location, density and effective diameter of the nanocrystals are in good quantitative agreement. These results validate the charge pumping approach as a non-destructive powerful technique to access most of the properties of nanocrystals embedded in dielectrics and located at injection distances from the substrate surface not limited to the direct tunneling regime.
本文使用两级电荷抽取 (CP) 技术作为频率和能量过滤透射电子显微镜 (EFTEM) 的函数，研究了用作存储器件中电荷俘获中心的硅纳米晶的特性。从两种方法中提取的参数，如纳米晶的深度位置、密度和有效直径，在定量上非常吻合。这些结果验证了电荷抽取方法作为一种非破坏性的强大技术，可以访问嵌入在电介质中的纳米晶的大部分特性，这些纳米晶的注入距离不限于从衬底表面的直接隧穿区。
