Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29201, USA.
Langmuir. 2012 Feb 28;28(8):3972-8. doi: 10.1021/la204522v. Epub 2012 Feb 16.
Recently, there has been growing interest in the design of novel nano- and/or microscaled heterojunctions consisting of two distinctive ordered semiconductor arrays for highly efficient p-n diodes used in optical, optielectronic, and microelectronic devices. Here, we report the attainment of an ordered double array comprising of p-type polyaniline microrods and n-type ZnO nanowires by a controlled electrochemical deposition method. Extensive chemical and physical characterizations have been performed on the fabricated p-n heterojunction. The double-array p-n heterojunction exhibits good rectifying characteristics, the rectification ratio of which exhibits a minimum at an illumination density of 93 mW cm(-2), making it suitable for high-sensitivity photodetectors. This research is expected to open up a new avenue for the development of highly efficient and sensitive p-n heterojunction diodes and possibly serve as the building blocks for future nanoelectronics.
最近，人们对于设计由两种不同有序半导体阵列组成的新型纳米和/或微米级异质结越来越感兴趣，这些异质结用于光学、光电和微电子设备中的高效 p-n 二极管。在这里，我们报告了通过受控电化学沉积方法获得由 p 型聚苯胺微棒和 n 型氧化锌纳米线组成的有序双阵列。对所制备的 p-n 异质结进行了广泛的化学和物理特性研究。双阵列 p-n 异质结表现出良好的整流特性，其整流比在光照密度为 93 mW cm(-2)时最小，使其适合用于高灵敏度光电探测器。这项研究有望为高效和灵敏的 p-n 异质结二极管的发展开辟新途径，并可能成为未来纳米电子学的基础。
