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CuS/PbS 异质结半导体纳米线阵列的结构用于电开关和二极管。

Architecture of CuS/PbS heterojunction semiconductor nanowire arrays for electrical switches and diodes.

机构信息

CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China.

出版信息

Inorg Chem. 2012 Jun 18;51(12):6771-5. doi: 10.1021/ic300471j. Epub 2012 Jun 6.

DOI:10.1021/ic300471j
PMID:22671306
Abstract

CuS/PbS p-n heterojunction nanowires arrays have been successfully synthesized. Association of template and DC power sources by controllable electrochemistry processes offers a technique platform to efficiently grow a combined heterojunction nanowire arrays driven by a minimization of interfacial energy. The resulting p-n junction materials of CuS/PbS show highly uniform 1D wire architecture. The single CuS/PbS p-n heterojunction nanowire based devices were fabricated, and their electrical behaviors were investigated. The independent nanowires exhibited a very high ON/OFF ratio of 1195, due to the association effect of electrical switches and diodes.

摘要

CuS/PbS 型 p-n 异质结纳米线阵列已成功合成。通过可控电化学过程将模板和直流电源结合在一起,为高效生长界面能最小化驱动的组合异质结纳米线阵列提供了技术平台。所得的 CuS/PbS 型 p-n 结材料具有高度均匀的一维线结构。制备了基于单个 CuS/PbS p-n 异质结纳米线的器件,并研究了它们的电性能。由于电开关和二极管的协同作用,独立纳米线的导通/关断比高达 1195。

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