Kim Hyo Jin, Mothohisa Junichi, Fukui Takashi
Photonic Energy Research Center, Korea Photonics Technology Institute, Wolchul dong 971-35, Buk-gu, Gwangju, Korea.
Nanoscale Res Lett. 2012 Feb 6;7(1):104. doi: 10.1186/1556-276X-7-104.
The optical properties of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO2-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In0.8Ga0.2As SAQDs grown on SiO2-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In0.8Ga0.2As SAQDs selectively grown by utilizing SiO2-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states.
利用二氧化硅图案化的精确（001）和5°偏离（001）的砷化镓衬底形成的砷化镓线结构上生长的In0.8Ga0.2As自组装量子点（SAQD）的光学性质，已通过微光致发光（μ-PL）进行了研究。在二氧化硅图案化的精确（001）砷化镓上生长的In0.8Ga0.2As SAQD出现单个PL峰，而随着开窗宽度增加，在5°偏离（001）砷化镓衬底上生长的SAQD则显示出双PL峰。功率相关的μ-PL光谱表明这些双峰的第一和第二峰分别源自明确的基态和激发态。这些结果表明，利用二氧化硅图案化的5°偏离（001）砷化镓衬底选择性生长的In0.8Ga0.2As SAQD具有明确的零维量子态。
