Department of Chemical Engineering, University of California, Santa Barbara, California 93106, USA.
ACS Nano. 2012 Mar 27;6(3):2629-41. doi: 10.1021/nn205120j. Epub 2012 Feb 17.
Directed assembly of block copolymer thin films is recognized as a high-throughput, low-cost complement to optical lithography with the ability to overcome the 32 nm natural resolution limit of conventional lithographic techniques. For bulk block copolymer systems, desired feature sizes ranging from 5 to 100 nm can be obtained by controlling the molecular weight and composition of a block copolymer, as long as the bulk order-disorder temperature (ODT) is such that the copolymer is well-segregated at the processing conditions. However, our studies on graphoepitaxially aligned cylindrical morphology block copolymer monolayer and bilayer films demonstrate that, as domain sizes are reduced, the block copolymer becomes increasingly susceptible to an unacceptably high density of thermally generated defects, resulting in a significant reduction of the ODT. Thus, in thin films, the minimum feature spacing accessible is limited by thermal defect generation and not by the bulk ODT. Our experimental studies on monolayer films of cylindrical morphology polystyrene-b-poly(2-vinyl pyridine) with microdomain spacings approaching 20 nm reveal that defect densities and the ODT are surprisingly sensitive to variations as small as 2 nm in the microdomain spacing. Additionally, the monolayer and bilayer ODT differ by nearly 100 °C when the monolayer domain spacing is 20 nm, while the difference is only 20 °C when the monolayer domain spacing is 22 nm. We explain this behavior using a quantitative estimation of the energetic cost of defect production in terms of the domain spacing, χN, and block copolymer composition. These studies reveal unexpected consequences on the equilibrium defect densities of thin film block copolymers which must be accounted for when designing a block-copolymer-based directed-assembly process.
定向组装嵌段共聚物薄膜被认为是一种高通量、低成本的技术,可以克服传统光刻技术的 32nm 自然分辨率限制,是光学光刻的有力补充。对于本体嵌段共聚物体系,只要本体有序-无序转变温度(ODT)使得共聚物在加工条件下能够很好地分离,通过控制嵌段共聚物的分子量和组成,可以获得 5nm 到 100nm 的所需特征尺寸。然而,我们对图形外延排列的圆柱形形貌嵌段共聚物单层和双层薄膜的研究表明,随着畴尺寸的减小,嵌段共聚物越来越容易受到热生成缺陷的高密度的影响,导致 ODT 显著降低。因此,在薄膜中,可达到的最小特征间距受到热缺陷生成的限制,而不是由本体 ODT 限制。我们对具有接近 20nm 微畴间距的圆柱形形貌聚苯乙烯-聚(2-乙烯基吡啶)单层膜的实验研究表明,缺陷密度和 ODT 对微畴间距仅 2nm 的微小变化非常敏感。此外,当单层畴间距为 20nm 时,单层和双层 ODT 相差近 100°C,而当单层畴间距为 22nm 时,两者相差仅 20°C。我们使用基于畴间距 χN 和嵌段共聚物组成的定量估计来解释这种缺陷生成的能量成本对薄膜嵌段共聚物平衡缺陷密度的影响。这些研究揭示了在设计基于嵌段共聚物的定向组装过程时必须考虑的薄膜嵌段共聚物中平衡缺陷密度的意外后果。