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硅衬底上的光子应变传感器的特性研究。

Characterization of a photonic strain sensor in silicon-on-insulator technology.

机构信息

Faculty of Applied Sciences, Delft University of Technology, Delft, The Netherlands.

出版信息

Opt Lett. 2012 Feb 15;37(4):479-81. doi: 10.1364/OL.37.000479.

Abstract

Recently there has been growing interest in sensing by means of optical microring resonators in photonic integrated circuits that are fabricated in silicon-on-insulator (SOI) technology. Taillaert et al. [Proc. SPIE 6619, 661914 (2007)] proposed the use of a silicon-waveguide-based ring resonator as a strain gauge. However, the strong lateral confinement of the light in SOI waveguides and its corresponding modal dispersion where not taken into account. We present a theoretical understanding, as well as experimental results, of strain applied on waveguide-based microresonators, and find that the following effects play important roles: elongation of the racetrack length, modal dispersion of the waveguide, and the strain-induced change in effective refractive index.

摘要

最近,人们对基于光子集成电路中的光学微环谐振器的传感越来越感兴趣,这些光子集成电路是用绝缘体上硅(SOI)技术制造的。Taillaert 等人[Proc. SPIE 6619, 661914 (2007)]提出使用基于硅波导的环形谐振器作为应变计。然而,他们没有考虑到 SOI 波导中光的强横向限制及其相应的模态色散。我们提出了对基于波导的微谐振器上施加应变的理论理解和实验结果,并发现以下效应起着重要作用:赛道长度的伸长、波导的模态色散以及应变引起的有效折射率变化。

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