TalebiFard Sahba, Schmidt Shon, Shi Wei, Wu WenXuan, Jaeger Nicolas A F, Kwok Ezra, Ratner Daniel M, Chrostowski Lukas
Department of Electrical and Computer Engineering, University of British Columbia, 2332 Main Mall, Vancouver, BC, V6T 1Z4, Canada.
Department of Bioengineering, University of Washington, Box 355061 Seattle, WA 98195, USA.
Biomed Opt Express. 2017 Jan 3;8(2):500-511. doi: 10.1364/BOE.8.000500. eCollection 2017 Feb 1.
Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU.
倏逝场传感器在生物传感应用中已展现出前景。特别是基于绝缘体上硅（SOI）的纳米光子谐振器传感器在片上实验室诊断方面具有诸多优势，包括对分子检测的高灵敏度以及与用于大规模制造的CMOS晶圆厂的兼容性。我们研究了在多项目晶圆（MPW）晶圆厂的制造限制范围内能使谐振器传感器获得最高灵敏度的最佳设计参数。我们已证明，使用准TM导模时，基于SOI的谐振器传感器要实现最大体灵敏度所需的最佳波导厚度为165 nm。MPW晶圆厂服务提供的最接近厚度是150 nm。因此，制造了具有150 nm厚硅波导的谐振器，其灵敏度高达270 nm/RIU，而具有220 nm厚波导的类似谐振器传感器的灵敏度约为200 nm/RIU。
