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使用纳米结构的氧化铟锡提高有机发光二极管的光提取效率。

Enhancement of light extraction efficiency of organic light emitting diodes using nanostructured indium tin oxide.

机构信息

Center for Organic Electronics, National Physical Laboratory (Council of Scientific and Industrial Research), New Delhi, India.

出版信息

Opt Lett. 2012 Feb 15;37(4):575-7. doi: 10.1364/OL.37.000575.

DOI:10.1364/OL.37.000575
PMID:22344111
Abstract

Improved outcoupling efficiency of organic light emitting diodes (OLEDs) is demonstrated by incorporating a nanostructured indium tin oxide (NSITO) film between a conducting anode and a glass substrate. NSITO film was fabricated using rf-sputtering at oblique angle (85°). Significant reduction in refractive index and improved transmission of NSITO film was observed. OLEDs were then fabricated onto NSITO film to extract the ITO-glass waveguided modes. Extraction efficiency was enhanced by 80% without introducing any detrimental effects to operating voltage, current density, and angular invariance of emission spectra of OLEDs.

摘要

通过在导电阳极和玻璃基底之间引入纳米结构的氧化铟锡(NSITO)薄膜,提高了有机发光二极管(OLEDs)的外耦合效率。采用射频磁控溅射法在 85°的斜角下制备 NSITO 薄膜。观察到 NSITO 薄膜的折射率显著降低,透光率提高。然后将 OLED 制备在 NSITO 薄膜上,以提取 ITO-玻璃导波模式。提取效率提高了 80%,而对 OLED 的工作电压、电流密度和发射光谱的角不变性没有任何不利影响。

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