Das Samaresh, Aluguri Rakesh, Manna Santanu, Singha Rajkumar, Dhar Achintya, Pavesi Lorenzo, Ray Samit Kumar
Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
Nanoscale Res Lett. 2012 Feb 20;7(1):143. doi: 10.1186/1556-276X-7-143.
Size-dependent photoluminescence characteristics from Ge nanocrystals embedded in different oxide matrices have been studied to demonstrate the light emission in the visible wavelength from quantum-confined charge carriers. On the other hand, the energy transfer mechanism between Er ions and Ge nanocrystals has been exploited to exhibit the emission in the optical fiber communication wavelength range. A broad visible electroluminescence, attributed to electron hole recombination of injected carriers in Ge nanocrystals, has been achieved. Nonvolatile flash-memory devices using Ge nanocrystal floating gates with different tunneling oxides including SiO2, Al2O3, HfO2, and variable oxide thickness [VARIOT] tunnel barrier have been fabricated. An improved charge storage characteristic with enhanced retention time has been achieved for the devices using VARIOT oxide floating gate.
已对嵌入不同氧化物基质中的锗纳米晶体的尺寸依赖性光致发光特性进行了研究，以证明量子限制电荷载流子在可见光波长范围内的发光。另一方面，已利用铒离子与锗纳米晶体之间的能量转移机制，在光纤通信波长范围内实现发光。已实现了归因于锗纳米晶体中注入载流子的电子空穴复合的宽可见电致发光。已制造出使用具有不同隧穿氧化物（包括SiO2、Al2O3、HfO2）的锗纳米晶体浮栅以及可变氧化物厚度[VARIOT]隧道势垒的非易失性闪存器件。对于使用VARIOT氧化物浮栅的器件，已实现了具有增强保留时间的改进电荷存储特性。
