Das S, Singha R K, Das K, Dhar A, Ray S K
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721302, India.
J Nanosci Nanotechnol. 2009 Sep;9(9):5484-8. doi: 10.1166/jnn.2009.1186.
SiO2/Ge nanocrystals/SiO2 trilayer memory structure has been fabricated by oxidizing and subsequent annealing of self assembled SiGe nanoislands grown by molecular beam epitaxy. The optical and charge storage characteristics of trilayer structures have been studied through Raman spectroscopy and capacitance-voltage measurements, respectively. An anti-clockwise hysteresis in the C-V characteristics indicated the net electron trapping in the floating gate containing Ge nanocrystals. Frequency dependent measurements of device characteristics indicate that neither interface defects nor deep traps are dominant for the charging or discharging processes of nanocrystal floating gates.
通过对分子束外延生长的自组装SiGe纳米岛进行氧化和后续退火，制备了SiO2/Ge纳米晶体/SiO2三层存储结构。分别通过拉曼光谱和电容-电压测量研究了三层结构的光学和电荷存储特性。C-V特性中的逆时针滞后表明在含有Ge纳米晶体的浮栅中存在净电子俘获。器件特性的频率依赖性测量表明，对于纳米晶体浮栅的充电或放电过程，界面缺陷和深陷阱均不起主导作用。
