金属有机化学气相沉积法制备相变 Ge1Sb2Te4 纳米线。

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.

机构信息

Laboratorio MDM, IMM-CNR, Unità di Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, (MB), Italy.

出版信息

Nano Lett. 2012 Mar 14;12(3):1509-15. doi: 10.1021/nl204301h. Epub 2012 Mar 6.

DOI:10.1021/nl204301h

Abstract

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

摘要

通过金属有机化学气相沉积，在温度和沉积压力的窄范围内，由金纳米岛催化，实现了 Ge(1)Sb(2)Te(4)纳米线（NWs）的自组装，用于相变存储器应用。在 400°C、50 毫巴的优化条件下，NWs 是 Ge(1)Sb(2)Te(4)单六方晶体。通过金属接触的 NWs 通过纳秒电流脉冲可实现相变存储开关的可逆诱导，其阈值电压约为 1.35V。