气-液-固生长的Si(1-x)Ge(x)纳米线的直径依赖性组成

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

作者信息

Zhang Xi, Lew Kok-Keong, Nimmatoori Pramod, Redwing Joan M, Dickey Elizabeth C

机构信息

Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.

出版信息

Nano Lett. 2007 Oct;7(10):3241-5. doi: 10.1021/nl071132u. Epub 2007 Sep 26.

DOI:10.1021/nl071132u

PMID:17894516

Abstract

Diameter-dependent compositions of Si(1-x)Ge(x) nanowires grown by a vapor-liquid-solid mechanism using SiH(4) and GeH(4) precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si(1-x)Ge(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below approximately 50 nm. The size-dependent nature of Ge concentration in Si(1-x)Ge(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

摘要

利用SiH₄和GeH₄前驱体通过气-液-固机制生长的Si(1-x)Ge(x)纳米线的直径依赖性成分，通过透射电子显微镜和X射线能量色散光谱进行了研究。在所研究的生长条件下，Si(1-x)Ge(x)纳米线中的Ge浓度对纳米线直径有很强的依赖性，当纳米线直径减小到约50nm以下时，Ge浓度随纳米线直径的减小而降低。Si(1-x)Ge(x)纳米线中Ge浓度的尺寸依赖性性质强烈暗示了吉布斯-汤姆逊效应，并突出了纳米线生长中的另一个重要现象。