Beijing Key Lab of New Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, China.
Phys Chem Chem Phys. 2012 Apr 7;14(13):4475-81. doi: 10.1039/c2cp23955h. Epub 2012 Feb 27.
Nanostructured Bi(2-x)Cu(x)S(3) (x = 0, 0.002, 0.005, 0.007, 0.01, 0.03) thermoelectric polycrystals were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods. The effect of Cu content on the microstructure and thermoelectric property of Bi(2-x)Cu(x)S(3) bulk samples was investigated. It was found that the subtle tailoring of Cu content could reduce both the electrical resistivity and the thermal conductivity at the same time, and consequently enhancing the thermoelectric property. A low electrical resistivity of 1.34 × 10(-4)Ω m(-1) and a low thermal conductivity of 0.52 W m(-1) K(-1) were obtained for the Bi(1.995)Cu(0.005)S(3) sample at 573 K. The low thermal conductivity is supposed to be due to the nanoscopic Cu-rich regions embedded in the host matrix. A peak ZT value of 0.34 at 573 K was achieved for the Bi(1.995)Cu(0.005)S(3) composition, which is the highest value in the Bi(2)S(3) system reported so far.
采用机械合金化（MA）和火花等离子烧结（SPS）相结合的方法制备了 Bi(2-x)Cu(x)S(3)（x = 0、0.002、0.005、0.007、0.01、0.03）纳米结构多晶热电体。研究了 Cu 含量对 Bi(2-x)Cu(x)S(3)块状样品的微观结构和热电性能的影响。结果表明，Cu 含量的细微调整可以同时降低电阻率和热导率，从而提高热电性能。在 573 K 时，Bi(1.995)Cu(0.005)S(3)样品的电阻率为 1.34×10(-4)Ω m(-1)，热导率为 0.52 W m(-1) K(-1)，达到了较低的值。低的热导率归因于纳米级富 Cu 区域嵌入在主相中。对于 Bi(1.995)Cu(0.005)S(3)组成，在 573 K 时获得了 0.34 的峰值 ZT 值，这是迄今为止报道的 Bi(2)S(3)体系中的最高值。
