通过 Cu 空位实现 BiCuSeO 热电器件性能的显著提升。
Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies.
机构信息
State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
出版信息
J Am Chem Soc. 2011 Dec 21;133(50):20112-5. doi: 10.1021/ja2091195. Epub 2011 Nov 22.
A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.
在层状氧硒化物 BiCuSeO 中实现了热电性能的显著增强。BiCu(1-x)SeO（x=0-0.1）的电导率和 Seebeck 系数表明，载流子通过 Cu 缺乏被引入到（Cu2Se2）2-层中。在 650°C 时，Bicu（0.975）Seo 的最大电导率为 3×103 S m-1，远大于原始 BiCuSeO 的 470 S m-1。具有非常低的热导率（约 0.5 W m-1 K-1）和较大的 Seebeck 系数（+273 μV K-1），通过引入 Cu 缺乏，在 650°C 时 ZT 值从原始 BiCuSeO 的 0.50 显著增加到 BiCu（0.975）SeO 的 0.81，使其成为中温热电应用的有前途的候选材料。
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