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通过掺杂碲提高硒化铜的热电性能。

Enhancing thermoelectric performance of CuSe by doping Te.

作者信息

Zhu Yong-Bin, Zhang Bo-Ping, Liu Yong

机构信息

The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China.

出版信息

Phys Chem Chem Phys. 2017 Oct 18;19(40):27664-27669. doi: 10.1039/c7cp05149b.

Abstract

Owing to the excellent electrical properties and inherently complex crystal structure, CuSe has been considered as a promising thermoelectric (TE) material. Herein, a series of CuSeTe (x = 0, 0.02, 0.04, 0.06, and 0.08) bulk samples are prepared by combining mechanical alloying (MA) and spark plasma sintering (SPS) to investigate the effect of Te content (x) on the phase structure, microstructure and TE properties of stoichiometric CuSe. It is found that a maximum TE figure of merit (ZT) value of 1.25 could be achieved for CuSeTe sample at 773 K, which essentially stemmed from the elevated power factor (PF) and reduced thermal conductivity (κ). The results obtained in our study indicate that the introduction of Te into stoichiometric CuSe is an effective and convenient strategy to improve ZT by enhancing PF and decreasing κ.

摘要

由于优异的电学性能和固有的复杂晶体结构,硒化铜(CuSe)被认为是一种很有前途的热电(TE)材料。在此,通过机械合金化(MA)和放电等离子烧结(SPS)相结合的方法制备了一系列CuSeTe(x = 0、0.02、0.04、0.06和0.08)块状样品,以研究碲含量(x)对化学计量比CuSe的相结构、微观结构和热电性能的影响。研究发现,CuSeTe样品在773 K时可实现最大热电优值(ZT)值为1.25,这主要源于功率因子(PF)的提高和热导率(κ)的降低。我们的研究结果表明,在化学计量比CuSe中引入碲是一种通过提高PF和降低κ来提高ZT的有效且简便的策略。

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