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用于金属离子注入的升级真空电弧离子源。

Upgraded vacuum arc ion source for metal ion implantation.

作者信息

Nikolaev A G, Oks E M, Savkin K P, Yushkov G Yu, Brown I G

机构信息

High Current Electronics Institute, Siberian Division of the Russian Academy of Science, Tomsk 634055, Russia.

出版信息

Rev Sci Instrum. 2012 Feb;83(2):02A501. doi: 10.1063/1.3655529.

DOI:10.1063/1.3655529
PMID:22380197
Abstract

Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed "Mevva," for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

摘要

在过去二十年里,世界上许多研究团队都制造并使用了真空电弧离子源。第一代真空电弧离子源(被称为“Mevva”,即金属蒸汽真空电弧)是20世纪80年代在劳伦斯伯克利国家实验室研发出来的。本文探讨了这种离子源的一种新的改进版本——我们称之为Mevva-V.Ru——的设计、性能参数及一些应用。该离子源在高达60 kV的引出电压下能产生宽束金属离子,且时间平均离子束流在毫安范围内。在此,我们描述我们在托木斯克研发的Mevva-V.Ru真空电弧离子源,并总结其束流特性以及我们将其用于的一些应用。我们还描述了使用复合阴极时的离子源性能。

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