Turek M, Prucnal S, Droździel A, Pyszniak K
Institute of Physics, Maria Curie-Sklodowska University, p1. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland.
Rev Sci Instrum. 2009 Apr;80(4):043304. doi: 10.1063/1.3117357.
The best method for the impurity doping to the host material is the ion implantation. Due to high melting point of the rare earth standard metal ion sources are useless. One of the solution is to use chemical compounds of rare earths characterized by low melting point. In this paper we describe the novel design of the ion source suitable for refractory metal (e.g., rare earths) ion implantation. The dependencies of Eu(+) current on cathode and arc currents as well as on hydrogen flow are presented. Europium (III) chloride as the source of the europium atoms was used. Europium ions were produced during collisions of evaporated and decomposed EuCl(3) molecules with fast electrons. The typical current of the europium ion beam extracted from the ion source was 25 microA for the extraction voltage of 25 kV. The ion source works without maintenance breaks for approximately 50 h, which enables high dose implantation. The presented ion source needs neither advanced high power supplies nor high vacuum regime.
向主体材料中进行杂质掺杂的最佳方法是离子注入。由于稀土标准金属离子源的熔点高，所以无用。解决方案之一是使用熔点低的稀土化合物。在本文中，我们描述了一种适用于难熔金属（如稀土）离子注入的新型离子源设计。给出了Eu(+)电流与阴极电流、电弧电流以及氢气流的关系。使用氯化铕（III）作为铕原子源。铕离子是在蒸发和分解的EuCl₃分子与快速电子碰撞过程中产生的。对于25 kV的提取电压，从离子源提取的铕离子束的典型电流为25 μA。该离子源可连续工作约50小时而无需维护中断，这使得能够进行高剂量注入。所展示的离子源既不需要先进的高功率电源，也不需要高真空环境。
