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化学气相沉积中石墨烯的拓扑演变:一种控制石墨烯畴形状的理论/实验综合方法。

Topology evolution of graphene in chemical vapor deposition, a combined theoretical/experimental approach toward shape control of graphene domains.

机构信息

Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing 100084, People's Republic of China.

出版信息

Nanotechnology. 2012 Mar 23;23(11):115605. doi: 10.1088/0957-4484/23/11/115605.

Abstract

Morphology control of thin film relies on understanding multiple ongoing processes during deposition and growth. To reveal the shape evolution of graphene domains on copper surfaces in chemical vapor deposition (CVD), a combinative study is performed on the CVD growth of graphene on copper surfaces. To identify the factors that influence the adsorption and diffusion of carbon atoms and further determine the domain shape, simulations based on kinetic Monte Carlo techniques are carried out. The results reveal the dependence of the graphene domain shapes on the crystalline orientation of the underlying copper substrate surfaces.

摘要

薄膜的形态控制依赖于对沉积和生长过程中多个进行中的过程的理解。为了揭示化学气相沉积(CVD)过程中铜表面上石墨烯畴的形状演变,对铜表面上石墨烯的 CVD 生长进行了综合研究。为了确定影响碳原子吸附和扩散的因素,并进一步确定畴的形状,基于动力学蒙特卡罗技术进行了模拟。结果表明,石墨烯畴的形状取决于基底铜表面的晶体取向。

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