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基于结构的 VDAC1 分析:N 端定位、易位、通道门控及与抗凋亡蛋白的关联。

Structure-based analysis of VDAC1: N-terminus location, translocation, channel gating and association with anti-apoptotic proteins.

机构信息

Department of Life Sciences and the National Institute for Biotechnology in the Negev, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel.

出版信息

Biochem J. 2012 Jun 15;444(3):475-85. doi: 10.1042/BJ20112079.

Abstract

Structural studies place the VDAC1 (voltage-dependent anion channel 1) N-terminal region within the channel pore. Biochemical and functional studies, however, reveal that the N-terminal domain is cytoplasmically exposed. In the present study, the location and translocation of the VDAC1 N-terminal domain, and its role in voltage-gating and as a target for anti-apoptotic proteins, were addressed. Site-directed mutagenesis and cysteine residue substitution, together with a thiol-specific cross-linker, served to show that the VDAC1 N-terminal region exists in a dynamic equilibrium, located within the pore or exposed outside the β-barrel. Using a single cysteine-residue-bearing VDAC1, we demonstrate that the N-terminal region lies inside the pore. However, the same region can be exposed outside the pore, where it dimerizes with the N-terminal domain of a second VDAC1 molecule. When the N-terminal region α-helix structure was perturbed, intra-molecular cross-linking was abolished and dimerization was enhanced. This mutant also displays reduced voltage-gating and reduced binding to hexokinase, but not to the anti-apoptotic proteins Bcl-2 and Bcl-xL. Replacing glycine residues in the N-terminal domain GRS (glycine-rich sequence) yielded less intra-molecular cross-linked product but more dimerization, suggesting that GRS provides the flexibility needed for N-terminal translocation from the internal pore to the channel face. N-terminal mobility may thus contribute to channel gating and interaction with anti-apoptotic proteins.

摘要

结构研究将 VDAC1(电压依赖性阴离子通道 1)N 端区域置于通道孔内。然而,生化和功能研究表明,N 端结构域是细胞质暴露的。在本研究中,VDAC1 N 端结构域的位置和易位及其在电压门控和作为抗凋亡蛋白靶标的作用被确定。定点突变和半胱氨酸残基取代,以及硫醇特异性交联剂,用于表明 VDAC1 N 端区域处于动态平衡中,位于孔内或暴露在β桶外。使用单个含有半胱氨酸残基的 VDAC1,我们证明 N 端区域位于孔内。然而,同一区域可以暴露在孔外,在那里它与第二个 VDAC1 分子的 N 端结构域二聚化。当 N 端区域α-螺旋结构受到干扰时,分子内交联被消除,二聚化增强。该突变体还显示出电压门控降低和与己糖激酶结合减少,但与抗凋亡蛋白 Bcl-2 和 Bcl-xL 结合不变。取代 N 端结构域 GRS(甘氨酸丰富序列)中的甘氨酸残基产生较少的分子内交联产物,但更多的二聚化,表明 GRS 提供了 N 端从内部孔到通道表面易位所需的灵活性。N 端的迁移性可能有助于通道门控和与抗凋亡蛋白的相互作用。

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