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近晶A液晶中由膨胀应变和剪切流产生的拓扑缺陷阵列的形成与排列。

Formation and ordering of topological defect arrays produced by dilatational strain and shear flow in smectic-A liquid crystals.

作者信息

Chatterjee Sourav, Anna Shelley L

机构信息

Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA.

出版信息

Phys Rev E Stat Nonlin Soft Matter Phys. 2012 Jan;85(1 Pt 1):011701. doi: 10.1103/PhysRevE.85.011701. Epub 2012 Jan 9.

Abstract

A microscale shear cell is used to study the formation of parabolic focal conic defects in the thermotropic smectic-A liquid crystal 8CB (4-octyl-4'-cyanobiphenyl). Defects are produced by four distinct methods: by the application of dilatational strain alone, by shear flow alone, by dilatational strain and subsequent shear flow, and by the simultaneous application of dilatational strain and shear flow. We confirm that defects originate within the bulk, consistent with the previously suggested undulation instability mechanism. In the presence of a shear flow, we observe that defect formation requires micrometer-level dilatations, whose magnitude depends on the sample thickness. The size and ordering of both disordered and ordered defect arrays is quantified using a pair distribution function. Deviations from the predictions of linear stability theory are observed that have not been reported previously. For example, defects form a square array with greater ordering in the principal flow direction. Ordering due to shear flow does not change the average defect size. It has been shown previously that the principal defect sizes of ordered defects scale differently with sample thickness than the wavelength of the small amplitude undulations. We find that disordered defects show a similar deviation from this predicted wavelength.

摘要

使用微尺度剪切池来研究热致近晶 - A液晶8CB(4 - 辛基 - 4'- 氰基联苯)中抛物线形焦锥缺陷的形成。缺陷通过四种不同方法产生:仅通过施加拉伸应变、仅通过剪切流、通过拉伸应变和随后的剪切流以及通过同时施加拉伸应变和剪切流。我们证实缺陷起源于体相中,这与先前提出的起伏不稳定性机制一致。在存在剪切流的情况下,我们观察到缺陷形成需要微米级的拉伸,其大小取决于样品厚度。使用对分布函数对无序和有序缺陷阵列的尺寸和有序度进行量化。观察到与线性稳定性理论预测的偏差,这些偏差以前尚未报道。例如,缺陷在主流方向上形成具有更高有序度的方形阵列。由于剪切流导致的有序化不会改变平均缺陷尺寸。先前已经表明,有序缺陷的主要缺陷尺寸与样品厚度的比例关系与小振幅起伏的波长不同。我们发现无序缺陷也显示出与该预测波长类似的偏差。

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