Hayashi Yasuhiko, Jang B, Iijima T, Tokunaga T, Hayashi A, Tanemura M, Amaratunga G A J
Department of Frontier Materials, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan.
J Nanosci Nanotechnol. 2011 Dec;11(12):11011-4. doi: 10.1166/jnn.2011.3964.
This paper presents direct growth of horizontally-aligned carbon nanotubes (CNTs) between two predefined various inter-spacing up to tens of microns of electrodes (pads) and its use as CNT field-effect transistors (CNT-FETs). Using the conventional photolithography technique followed by thin film evaporation and lift off, the catalytic electrodes (pads) were prepared, consisting of Pt, Al and Fe triple layers on SiO2/Si substrate. The grown CNTs were horizontally-aligned across the catalytic electrodes on the modified gold image furnace hot stage (thermal CVD) at 800 degrees C by using an alcohol vapor as the carbon source. Scanning and transmission electron microcopies (SEM/TEM) were used to observe the structure, growth direction and density of CNTs, while Raman spectrum analysis was used to indicate the degree of amorphous impurity and diameter of CNTs. Both single- and multi-wall CNTs with diameters of 1.1-2.2 nm were obtained and the CNT density was controlled by thickness of Fe catalytic layer. Following horizontally-aligned growth of CNTs, the electrical properties of back-gate CNT-FETs were measured and showd p-type conduction behaviors of FET.
本文介绍了在间距达数十微米的两个预定义的不同间距电极（焊盘）之间直接生长水平排列的碳纳米管（CNT）及其用作碳纳米管场效应晶体管（CNT - FET）的情况。采用传统光刻技术，随后进行薄膜蒸发和剥离，在SiO2/Si衬底上制备了由Pt、Al和Fe三层组成的催化电极（焊盘）。通过使用酒精蒸汽作为碳源，在800℃的改良金图像炉热台（热化学气相沉积）上，生长的碳纳米管水平排列在催化电极上。使用扫描电子显微镜和透射电子显微镜（SEM/TEM）观察碳纳米管的结构、生长方向和密度，同时使用拉曼光谱分析来指示碳纳米管的非晶杂质程度和直径。获得了直径为1.1 - 2.2nm的单壁和多壁碳纳米管，并且碳纳米管密度由Fe催化层的厚度控制。在碳纳米管水平排列生长之后，测量了背栅碳纳米管场效应晶体管的电学性能，结果显示场效应晶体管具有p型导电行为。
