Seo Jae Keun, Choi Won Seok, Kim Hee Dong, Lee Jae-Hyeoung, Choi Eun Chang, Kim Hyung Jin, Hong Byungyou
Department of Electrical Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea.
J Nanosci Nanotechnol. 2011 Dec;11(12):11032-6. doi: 10.1166/jnn.2011.4022.
We have investigated the direct growth of metal-free carbon nanotubes (CNTs) on glass substrates with microwave-plasma enhanced chemical vapor deposition (MPECVD). Amorphous carbon (a-C) films were used as a catalyst layer to grow metal-free CNTs. The a-C films were deposited on Corning glass substrates using RF magnetron sputtering with the use of a carbon target (99.99%) at room temperature. They were pretreated with hydrogen plasma using a microwave PECVD at 600 degrees C. Then, CNTs were prepared using microwave PECVD with a mixture of methane (CH4) and hydrogen (H2) gases. The CNTs were grown at different substrate temperatures (400 degrees C, 500 degrees C, and 600 degrees C) for 30 minutes. Other conditions were fixed. The growth trends of CNTs against substrate temperature were observed by field emission scanning electron microscopy (FE-SEM). The structure of a-C catalyst layer and grown CNTs were measured by Raman spectroscopy. High-resolution transmission electron microscopy (HR-TEM) images showed that the CNTs had bamboo-like multi-walled structures. Energy dispersive spectroscopy (EDS) measurements confirmed that the CNTs consisted of only carbon.
我们利用微波等离子体增强化学气相沉积(MPECVD)研究了在玻璃基板上直接生长无金属碳纳米管(CNT)的情况。非晶碳(a-C)薄膜被用作催化剂层来生长无金属碳纳米管。在室温下,使用射频磁控溅射并借助碳靶(纯度99.99%)将a-C薄膜沉积在康宁玻璃基板上。在600摄氏度下,利用微波PECVD对它们进行氢等离子体预处理。然后,使用微波PECVD并以甲烷(CH4)和氢气(H2)的混合气体制备碳纳米管。碳纳米管在不同的基板温度(400摄氏度、500摄氏度和600摄氏度)下生长30分钟。其他条件保持固定。通过场发射扫描电子显微镜(FE-SEM)观察碳纳米管相对于基板温度的生长趋势。利用拉曼光谱测量a-C催化剂层和生长的碳纳米管的结构。高分辨率透射电子显微镜(HR-TEM)图像显示,碳纳米管具有竹节状的多壁结构。能量色散光谱(EDS)测量证实,碳纳米管仅由碳组成。