Lee Sangjoon, Choi Won Seok, Yoo Jinsu, Lim Dong-Gun, Kim Hyung Jin, Lee Hyeoung-Jae, Hong Byungyou
J Nanosci Nanotechnol. 2014 Dec;14(12):9189-93. doi: 10.1166/jnn.2014.10107.
In this study, the coating of synthesized carbon nanowalls (CNWs) with various metal layers (Ni, Cu, and W) was investigated. CNWs were synthesized by microwave plasma enhanced chemical vapor deposition (PECVD) with a methane (CH4) and hydrogen (H2) gas mixture on a p-type Si wafer, and then coated with metal films (Ni, Cu, and W) using an RF magnetron sputtering system with four-inch targets. Different sputtering times (5, 10, 20, and 30 min) were established to obtain different thicknesses of the metal layers with which the CNWs were coated. Field emission scanning electron microscopy (FE-SEM) was used to examine the cross-sectional and planar conditions of the CNWs, and energy dispersive spectroscopy (EDS) was used to analyze the CNW elements. The FE-SEM analysis of the cross-sectional and planar images confirmed that the metal layers were synthesized to a depth of 0.5 μm from the surfaces of the CNWs, and to a greater depth at the ends of the CNWs, irrespective of the deposition time and the metal species. The resistivity of the as-deposited CNWs appeared as 4.18 x 10(-3) Ω cm; that of the metal-coated CNWs was slightly lower; and that of the Ni-coated CNWs was the lowest (1.74 x 10(-3) Ω cm). The mobility of the metal-coated CNWs was almost unchanged, and that of the as-deposited CNWs was 1.23 x 10(3) cm2 V(-1) s(-1).
在本研究中，对用各种金属层（镍、铜和钨）包覆合成碳纳米壁（CNWs）进行了研究。通过微波等离子体增强化学气相沉积（PECVD），以甲烷（CH₄）和氢气（H₂）的混合气体在p型硅片上合成CNWs，然后使用配备四英寸靶材的射频磁控溅射系统，在其上包覆金属膜（镍、铜和钨）。设定不同的溅射时间（5、10、20和30分钟），以获得包覆CNWs的不同厚度的金属层。用场发射扫描电子显微镜（FE-SEM）检查CNWs的横截面和平面状况，并用能量色散光谱（EDS）分析CNW元素。对横截面和平面图像的FE-SEM分析证实，无论沉积时间和金属种类如何，金属层均从CNWs表面向内合成至0.5μm深度，在CNWs端部合成深度更大。沉积态CNWs的电阻率为4.18×10⁻³Ω·cm；金属包覆CNWs的电阻率略低；镍包覆CNWs的电阻率最低（1.74×10⁻³Ω·cm）。金属包覆CNWs的迁移率几乎不变，沉积态CNWs的迁移率为1.23×10³cm²V⁻¹s⁻¹。
