Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China.
ACS Nano. 2012 Apr 24;6(4):3624-30. doi: 10.1021/nn300966j. Epub 2012 Mar 29.
InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO(2)/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I(ON)/I(OFF) ratio >10(5), field-effect mobility of ∼2700 cm(2)/(V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.
由于具有低有效电子质量和相应的高载流子迁移率，InAs 纳米线在高速和高频电子领域得到了广泛的研究。然而，进一步的应用仍然受到 InAs 纳米线器件中由于小电子能带隙而产生的显著漏电流的影响。在这里，我们成功地合成了三元 InGaAs 纳米线，以利用较大能带隙材料来解决这个漏电流问题，同时不牺牲高电子迁移率。在这项工作中，我们采用两步生长法在非晶硅（SiO2）/硅衬底上生长，这显著减少了纳米线的扭结形态和表面涂层。生长的纳米线具有优异的结晶度和沿纳米线整个长度均匀的化学计量组成。更重要的是，这些纳米线的电学性能非常出色，具有 I（ON）/I（OFF）比值>10（5）、约 2700cm2/（V·s）的场效应迁移率和约 0.9mA/μm 的导通电流密度。这些纳米线随后被用于接触印刷，并实现了纳米线平行阵列的大规模组装，进一步说明了在未来集成电路的衬底上利用这些高性能纳米线的潜力。
