Ding Jianfeng, Chen Hongtao, Yang Lin, Zhang Lei, Ji Ruiqiang, Tian Yonghui, Zhu Weiwei, Lu Yangyang, Zhou Ping, Min Rui, Yu Mingbin
State Key Laboratory on Integrated Optoelectronics & Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Opt Express. 2012 Mar 26;20(7):7081-7. doi: 10.1364/OE.20.007081.
We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit (VπL) of 1.28 V·cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW.
我们展示了一种26 Gbit/s的马赫-曾德尔硅光调制器。优化了掺杂浓度和分布，实现了品质因数（VπL）为1.28 V·cm的调制效率。我们在p型和n型掺杂区域之间设计了一个80纳米宽的本征硅间隙，以降低二极管的电容，并防止二极管在缓慢扩散模式下工作。因此，该调制器在无偏置情况下可以用0.5 V的小差分电压驱动。在不消除串联电阻的耗散功率和电信号的反射功率的情况下，最大功耗为3.8 mW。
