Dong Po, Liao Shirong, Feng Dazeng, Liang Hong, Zheng Dawei, Shafiiha Roshanak, Kung Cheng-Chih, Qian Wei, Li Guoliang, Zheng Xuezhe, Krishnamoorthy Ashok V, Asghari Mehdi
Kotura Inc., 2630 Corporate Place, Monterey Park, CA, 91754, USA.
Opt Express. 2009 Dec 7;17(25):22484-90. doi: 10.1364/OE.17.022484.
We present a high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a V(pp) of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2).
我们展示了一种基于微环谐振器的具有低V(pp)（峰峰值驱动电压）和超低能耗的高速硅光调制器，其折射率调制是通过嵌入环形结构中的反向偏置横向pn二极管中电场诱导的载流子耗尽来实现的。在V(pp)为2V的情况下，我们展示了一种硅调制器，其3dB带宽为11GHz，调制深度为6.5dB，插入损耗为2dB，每位超低能耗为50fJ，器件有源面积小，约为1000平方微米。
