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宽带线性化硅调制器。

Broadband linearized silicon modulator.

作者信息

Khilo Anatol, Sorace Cheryl M, Kärtner Franz X

机构信息

Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

出版信息

Opt Express. 2011 Feb 28;19(5):4485-500. doi: 10.1364/OE.19.004485.

Abstract

A scheme to achieve a wideband linearized silicon Mach-Zehnder (MZ) modulator is proposed. The modulator consists of a single MZ interferometer with identical reverse-biased silicon diode phase shifters in both arms, driven in a push-pull configuration. It is shown that the 3rd order nonlinearity of the modulator can be eliminated by canceling the nonlinearities from the silicon phase shifters and the MZ transfer function against each other. The 2nd order nonlinearity is simultaneously eliminated by differential detection or operation away from the quadrature point. As a result, the linearity of the proposed silicon modulator greatly exceeds the linearity of a conventional MZ modulator with ideal, linear (e.g. LiNbO3) phase shifters. The simplicity and large optical and RF bandwidth of the proposed modulator make it attractive for analog photonic applications.

摘要

提出了一种实现宽带线性化硅马赫-曾德尔(MZ)调制器的方案。该调制器由单个MZ干涉仪组成,其双臂均具有相同的反向偏置硅二极管移相器,并采用推挽配置驱动。结果表明,通过相互抵消硅移相器的非线性和MZ传递函数的非线性,可以消除调制器的三阶非线性。通过差分检测或在正交点之外进行操作,可以同时消除二阶非线性。因此,所提出的硅调制器的线性度大大超过了具有理想线性(如铌酸锂)移相器的传统MZ调制器的线性度。所提出的调制器的简单性以及大的光学和射频带宽使其在模拟光子应用中具有吸引力。

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