rGO 场效应晶体管的简易制备方法：通过静电吸引作用，使 rGO 选择性地吸附在 SAM 处理过的金电极上。
Facile method for rGO field effect transistor: selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction.
机构信息
Interdisciplinary School of Green Energy, Low Dimensional Carbon Materials Center and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science & Technology (UNIST), UNIST-gil 50, Ulsan, Republic of Korea.
出版信息
Adv Mater. 2012 May 2;24(17):2299-303. doi: 10.1002/adma.201104094. Epub 2012 Apr 2.
A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.
提出了一种简便的制备带正负电荷还原氧化石墨烯场效应晶体管（FET）的方法，该方法利用了电极与还原氧化石墨烯片之间的静电吸引作用。带负电荷和正电荷的还原氧化石墨烯片分别用羧酸和胺基团功能化。胺功能化还原氧化石墨烯的 FET 表现出 n 掺杂效应。通过这种方法制备的 FET 器件表现出高载流子迁移率。
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