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外延生长在 FeF2 上的交换偏置铁磁薄膜中的界面二次型耦合和磁子散射

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2.

机构信息

Department of Physics, West Virginia University, Morgantown, WV 26506, USA.

出版信息

J Phys Condens Matter. 2012 May 9;24(18):186001. doi: 10.1088/0953-8984/24/18/186001. Epub 2012 Apr 5.

DOI:10.1088/0953-8984/24/18/186001
PMID:22481222
Abstract

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).

摘要

我们研究了生长在反铁磁(AF)FeF2(110)外延层上的铁磁(FM)Ni、Co 和 Fe 多晶薄膜的磁各向异性,这是通过铁磁共振作为温度的函数来进行的。除了由 AF 短程有序波动引起的 FM 中的面内各向异性之外,还发现了具有面外分量的垂直(双二次)磁各向异性,其随温度降低而增加,超过 AF Neél 温度(TN = 78.4 K)。这是一个令人惊讶的结果,因为 AF 的单轴各向异性轴在样品的平面内,但与先前的实验和理论工作一致。共振线宽对外部磁场相对于平面内 FeF2晶体学方向的方向有很强的依赖性,这与由于缺陷诱导的退磁场引起的界面磁子散射一致。在 TN以下,通过 FMR 测量的 Ni 样品的交换偏置场 H(E)与通过磁化测量确定的 H(E)非常吻合,如果考虑垂直面外各向异性的话。在 H ≈ 0 处通常观察到的低场共振线与铁磁体中磁化过程中的畴形成有关,它与 T < TN时的交换偏置场一致,表明畴形成时 FM 与 AF 易轴垂直。因此,双二次 FM-AF 耦合在 TN以下和以上的温度下都很重要。

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