School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
ACS Nano. 2012 May 22;6(5):4369-74. doi: 10.1021/nn3010558. Epub 2012 Apr 11.
We demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.
我们首次展示了一种基于 ZnSnO(3)纳米线/微丝的柔性应变传感器。高分辨率透射电子显微镜表明，ZnSnO(3)属于具有 R3c 空间群的菱面体结构，沿[001]轴生长。基于我们的实验观察和理论计算，ZnSnO(3)的特征 I-V 曲线表明我们的应变传感器具有超高的灵敏度，这归因于压电势调制的肖特基势垒高度(SBH)变化，即压电器效应。我们器件的开关比约为 587，已证明其应变系数为 3740，是硅的 19 倍，是碳纳米管和 ZnO 纳米线的 3 倍。
