Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA.
J Chem Phys. 2012 Apr 21;136(15):154706. doi: 10.1063/1.4704126.
Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-Al(2)O(3) is the critical step in fabricating III-V metal oxide semiconductor field effect transistors; while the bulk oxide is amorphous, the interface may need to be ordered to prevent electrical defect formation. A two temperature in situ cleaning process is shown to produce a clean, flat group III or group V rich InGaAs surface. The dependence of initial surface reconstruction and dosing temperature of the seeding of aluminum with trimethylaluminum dosing is observed to produce an ordered unpinned passivation layer on InGaAs(001)-(4 × 2) surface at sample temperatures below 190 °C. Conversely, the InGaAs(001)-(2 × 4) surface is shown to generate an unpinned passivation layer with a seeding temperature up to 280 °C. For both reconstructions, the chemical drive force is consistent with formation of As-Al-As bonds. The optimal seed layer protects the surface from background contamination.
形成无污染物、平坦、电无源的栅氧化层界面，如 a-Al(2)O(3)，是制造 III-V 金属氧化物半导体场效应晶体管的关键步骤；虽然体氧化物是无定形的，但界面可能需要有序排列，以防止电缺陷的形成。本文提出了一种两温原位清洗工艺，可制备出清洁、平坦的 III 族或 V 族富 InGaAs 表面。观察到初始表面重构和剂量温度对三甲基铝剂量的铝种子的依赖性，以在低于 190°C 的样品温度下在 InGaAs(001)-(4×2)表面上生成有序的无钉扎钝化层。相反，InGaAs(001)-(2×4)表面在高达 280°C 的种晶温度下生成无钉扎钝化层。对于这两种重构，化学驱动力与形成 As-Al-As 键一致。最佳的种子层可保护表面免受背景污染。
