Lim Xiaodai, Zhu Yanwu, Varghese Binni, Gao Xingyu, Wee Andrew Thye Shen, Sow Chorng-Haur
Department of Physics, Blk S12, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
J Nanosci Nanotechnol. 2012 Jan;12(1):258-66. doi: 10.1166/jnn.2012.5146.
In this work, a simple technique to improve the field emission property of multi-walled carbon nanotubes is presented. Re-grown multi-walled carbon nanotubes are grown on the same substrates after the as-grown multi-walled carbon nanotubes are transferred to other substrates using polydimethylsiloxane as intermediation. For the duration of the synthesis of the re-grown multi-walled carbon nanotubes, similar synthesis parameters used in growing the as-grown multi-walled carbon nanotubes are utilized. As a form of possible application, field emission studies show -2.6 times improvement in field enhancement factor and more uniform emission for the re-grown multi-walled carbon nanotubes. In addition, the turn-on field is reduced from 2.85 V/microm to 1.40 V/microm. Such significant improvements are attributed to new emission sites comprising of sharp carbonaceous impurities encompassing both tip and upper portion of the multi-walled carbon nanotubes. As such, this technique presents a viable route for the production of multi-walled carbon nanotubes with better field emission quality.
在这项工作中，提出了一种改善多壁碳纳米管场发射性能的简单技术。在使用聚二甲基硅氧烷作为媒介将生长态多壁碳纳米管转移到其他衬底后，在相同衬底上重新生长多壁碳纳米管。在重新生长多壁碳纳米管的合成过程中，采用了与生长生长态多壁碳纳米管时相似的合成参数。作为一种可能的应用形式，场发射研究表明，重新生长的多壁碳纳米管的场增强因子提高了2.6倍，发射更均匀。此外，开启场从2.85V/μm降低到1.40V/μm。这些显著的改进归因于由尖锐的含碳杂质组成的新发射位点，这些杂质同时包含多壁碳纳米管的尖端和上部。因此，该技术为生产具有更好场发射质量的多壁碳纳米管提供了一条可行的途径。
