Ozasa Kazunari, Ito Hiromi, Maeda Mizuo, Hara Masahiko
RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
J Nanosci Nanotechnol. 2012 Jan;12(1):499-502. doi: 10.1166/jnn.2012.5413.
The surface potential (SP) morphology on thin films of tris(8-hydroxyquinolinato) aluminum (Alq3) was investigated with Kelvin probe force microscopy. Thin Alq3 films of 100 nm were prepared on ITO/glass substrates, Au/mica substrates, and n-Si substrates. Cloud-like morphologies of the SP undulation with 200-400 nm in lateral size were observed for all three types of the substrates. New larger peaks were observed in the cloud-like morphologies when the surfaces were exposed shortly to a light, while the SP average was reduced monotonically. The nonuniform distribution of charged traps and mobility was deduced from the SP undulation morphology and its photoexposure dependences.
采用开尔文探针力显微镜研究了三（8-羟基喹啉）铝（Alq3）薄膜的表面电势（SP）形态。在ITO/玻璃基板、金/云母基板和n型硅基板上制备了100nm的Alq3薄膜。在所有三种类型的基板上均观察到横向尺寸为200-400nm的SP起伏的云状形态。当表面短暂暴露于光下时，在云状形态中观察到新的较大峰值，而SP平均值单调降低。从SP起伏形态及其光暴露依赖性推断出带电陷阱和迁移率的不均匀分布。
