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在氧化的阶跃堆积硅模板上制备的 Co 平面纳米线阵列的磁性。

Magnetic properties of planar nanowire arrays of Co fabricated on oxidized step-bunched silicon templates.

机构信息

Centre for Research on Adaptive Nanostructures and Nanodevices and School of Physics, Trinity College Dublin, Dublin 2, Ireland.

出版信息

Nanotechnology. 2012 Jun 15;23(23):235702. doi: 10.1088/0957-4484/23/23/235702. Epub 2012 May 17.

Abstract

Planar nanowire (NW) arrays of Co grown on oxidized step-bunched Si(111) templates exhibit room temperature ferromagnetic behaviour for wire widths down to 25 nm. Temperature and thickness dependent magnetization studies on these polycrystalline NW arrays show that the magnetic anisotropy of the NW array is dominated by shape anisotropy, which keeps the magnetization in-plane with easy axis parallel to the wires. This shape related uniaxial anisotropy is preserved even at low temperatures (10 K). Thickness dependent studies reveal that the magnetization reversal is governed by the curling mode reversal for thick wires whereas thinner wires exhibit a more complex behaviour which is related to thermal effects and size distribution of the crystal grains that constitute the NWs.

摘要

在氧化的阶跃型堆积硅(111)模板上生长的平面纳米线(NW)阵列,其线宽低至 25nm 时表现出室温铁磁性。对这些多晶 NW 阵列的温度和厚度相关磁化研究表明,NW 阵列的磁各向异性主要由形状各向异性决定,这使得磁化与易轴平行于 NW 平面。即使在低温(10K)下,这种与形状相关的单轴各向异性也得以保持。厚度相关的研究表明,对于较粗的 NW,磁化反转由卷曲模式反转控制,而较细的 NW 则表现出更为复杂的行为,这与热效应和构成 NW 的晶粒的尺寸分布有关。

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