Ha Rin, Kim Shinho, Kim Hyun Jong, Lee Jung Chul, Bae Jong-Seong, Kim Yangdo
School of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea.
J Nanosci Nanotechnol. 2012 Feb;12(2):1448-52. doi: 10.1166/jnn.2012.4677.
Silicon quantum dot superlattice was fabricated by alternating deposition of silicon rich nitride (SRN) and Si3N4 layers using RF magnetron co-sputtering. Samples were then annealed at temperatures between 800 and 1,100 degrees C and characterized by grazing incident X-ray diffraction (GIXRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). GIXRD and Raman analyses show that the formation of silicon quantum dots occurs with annealing above 1,100 degrees C for at least 60 minutes. As the annealing time increased the crystallization of silicon quantum dots was also increased. TEM images clearly showed SRN/Si3N4 superlattice structure and silicon quantum dots formation in SRN layers after annealing at 1,100 degrees C for more than 60 minutes. The changes in FTIR transmission spectra observed with annealing condition corresponded to the configuration of Si-N bonds. Crystallization of silicon quantum dots in a silicon nitride matrix started stabilizing after 60 minutes' annealing and approached completion after 120 minutes'. The systematic investigation of silicon quantum dots in a silicon nitride matrix and their properties for solar cell application are presented.
通过射频磁控共溅射交替沉积富硅氮化物（SRN）和Si3N4层制备了硅量子点超晶格。然后将样品在800至1100摄氏度之间的温度下退火，并通过掠入射X射线衍射（GIXRD）、透射电子显微镜（TEM）、拉曼光谱和傅里叶变换红外光谱（FTIR）进行表征。GIXRD和拉曼分析表明，在1100摄氏度以上退火至少60分钟会形成硅量子点。随着退火时间的增加，硅量子点的结晶度也增加。TEM图像清楚地显示了在1100摄氏度退火超过60分钟后，SRN/Si3N4超晶格结构以及SRN层中硅量子点的形成。观察到的FTIR透射光谱随退火条件的变化与Si-N键的构型相对应。在氮化硅基体中，硅量子点的结晶在退火60分钟后开始稳定，并在120分钟后接近完成。本文对氮化硅基体中的硅量子点及其在太阳能电池应用中的性能进行了系统研究。
