通过迁移增强分子束外延法在InAs基体中自组装生长GaAs反量子点

Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.

作者信息

Lee E H, Song J D, Kim S Y, Han I K, Chang S K, Lee J I

机构信息

Nano Convergence Devices Center Korea Institute of Science and Technology, Seoul 136-791, Korea.

出版信息

J Nanosci Nanotechnol. 2012 Feb;12(2):1480-2. doi: 10.1166/jnn.2012.4702.

DOI:10.1166/jnn.2012.4702

PMID:22629983

Abstract

Self-assembled GaAs anti quantum dots (AQDs) were grown in an InAs matrix via migration enhanced molecular beam epitaxy. The transmission electron microscopy image showed that the 2D to 3D transition thickness is below 1.5 monolayers (MLs) of GaAs coverage. The average diameter and height of the GaAs AQDs for 1.5 ML GaAs coverage taken from the atomic force microscopy image were approximately 29.0 nm and 1.4 nm, respectively. The density was approximately 6.0 x 10(10) cm(-2). The size of the AQDs was enlarged in the InAs matrix compared with that on the surface. These results indicate that the GaAs AQDs in the InAs matrix under tensile strain can be effectively formed with the assistance of the migration enhanced epitaxy method.

摘要

通过迁移增强分子束外延在 InAs 基质中生长自组装 GaAs 反量子点（AQDs）。透射电子显微镜图像显示，二维到三维的转变厚度低于 1.5 单层（MLs）的 GaAs 覆盖度。从原子力显微镜图像获取的 1.5 ML GaAs 覆盖度下 GaAs AQDs 的平均直径和高度分别约为 29.0 nm 和 1.4 nm。密度约为 6.0×10(10) cm(-2)。与表面相比，InAs 基质中 AQDs 的尺寸增大。这些结果表明，在拉伸应变下，InAs 基质中的 GaAs AQDs 可借助迁移增强外延方法有效形成。