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一种用于血管移植物的感应式供电植入式血流传感器微系统。

An inductively powered implantable blood flow sensor microsystem for vascular grafts.

机构信息

Institute of Microelectronics, Agency for Science, Technology and Research, Singapore.

出版信息

IEEE Trans Biomed Eng. 2012 Sep;59(9):2466-75. doi: 10.1109/TBME.2012.2203131. Epub 2012 Jun 6.

Abstract

Monitoring blood flow rate inside prosthetic vascular grafts enables an early detection of the graft degradation, followed by the timely intervention and prevention of the graft failure. This paper presents an inductively powered implantable blood flow sensor microsystem with bidirectional telemetry. The microsystem integrates silicon nanowire (SiNW) sensors with tunable piezoresistivity, an ultralow-power application-specific integrated circuit (ASIC), and two miniature coils that are coupled with a larger coil in an external monitoring unit to form a passive wireless link. Operating at 13.56-MHz carrier frequency, the implantable microsystem receives power and command from the external unit and backscatters digitized sensor readout through the coupling coils. The ASIC fabricated in 0.18-μm CMOS process occupies an active area of 1.5 × 1.78 mm (2) and consumes 21.6 μW only. The sensors based on the SiNW and diaphragm structure provide a gauge factor higher than 300 when a small negative tuning voltage (-0.5-0 V) is applied. The measured performance of the pressure sensor and ASIC has demonstrated 0.176 mmHg/√Hz sensing resolution.

摘要

监测人工血管移植物内的血流速率可以实现对移植物降解的早期检测,从而及时进行干预并防止移植物失效。本文提出了一种具有双向遥测功能的感应式植入式血流传感器微系统。该微系统将具有可调谐压阻的硅纳米线(SiNW)传感器、超低功耗专用集成电路(ASIC)以及两个微型线圈集成在一起,微型线圈与外部监测单元中的较大线圈耦合,形成无源无线链路。该植入式微系统工作在 13.56MHz 的载波频率下,从外部单元接收功率和命令,并通过耦合线圈反向散射数字化传感器读数。采用 0.18μm CMOS 工艺制造的 ASIC 占据了 1.5×1.78mm(2)的有源面积,仅消耗 21.6μW 的功率。基于 SiNW 和膜片结构的传感器在施加小的负调谐电压(-0.5-0V)时提供了高于 300 的应变系数。所测量的压力传感器和 ASIC 的性能表明,其具有 0.176mmHg/√Hz 的传感分辨率。

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