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810nm 半导体激光照射对水门汀类根管封闭剂的影响。

Influence of prior 810-nm-diode intracanal laser irradiation on hydrophilic resin-based sealer obturation.

机构信息

Department of Endodontics, Dental School, Universidade Cruzeiro do Sul, São Paulo, SP, Brazil.

出版信息

Braz Oral Res. 2012 Jul-Aug;26(4):323-9. doi: 10.1590/s1806-83242012005000010. Epub 2012 Jun 19.

DOI:10.1590/s1806-83242012005000010
PMID:22714928
Abstract

Dentin wall structural changes caused by 810-nm-diode laser irradiation can influence the sealing ability of endodontic sealers. The objective of this study was to evaluate the apical leakage of AH Plus and RealSeal resin-based sealers with and without prior diode laser irradiation. Fifty-two single-rooted mandibular premolars were prepared and divided into 4 groups, according to the endodontic sealer used and the use or non-use of laser irradiation. The protocol for laser irradiation was 2.5W, continuous wave in scanning mode, with 4 exposures per tooth. After sample preparation, apical leakage of 50% ammoniacal silver nitrate impregnation was analyzed. When the teeth were not exposed to irradiation, the RealSeal sealer achieved the highest scores, showing the least leakage, with significant differences at the 5% level (Kruskal-Wallis test, p = 0.0004), compared with AH Plus. When the teeth were exposed to the 810-nm-diode laser irradiation, the sealing ability of AH Plus sealer was improved (p = 0282). In the RealSeal groups, the intracanal laser irradiation did not interfere with the leakage index, showing similar results in the GRS and GRSd groups (p = 0.1009).

摘要

810nm 半导体激光照射对牙本质壁结构的改变可能会影响根管封闭剂的封闭能力。本研究的目的是评估在使用和不使用二极管激光照射的情况下,AH Plus 和 RealSeal 树脂基封闭剂的根尖泄漏情况。将 52 颗下颌前磨牙随机分为 4 组,根据使用的根管封闭剂和是否使用激光照射进行分组。激光照射方案为 2.5W、连续波扫描模式,每个牙照射 4 次。在样本制备后,分析 50%氨硝酸银浸渍的根尖泄漏情况。当牙齿未暴露于照射下时,RealSeal 封闭剂的评分最高,泄漏最少,与 AH Plus 相比差异有统计学意义(Kruskal-Wallis 检验,p = 0.0004)。当牙齿暴露于 810nm 半导体激光照射下时,AH Plus 封闭剂的密封能力得到了提高(p = 0.0282)。在 RealSeal 组中,根管内激光照射并没有干扰泄漏指数,GRS 和 GRSd 组的结果相似(p = 0.1009)。

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